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Manufacture:Gasonics
Refurbished by:Allwin21 Corp
Gasonics is a Registered Trademark of Novellus Corp.GaSonic Aura 1000 Plasma System is the microprocessor controlled down-stream, or “ afterglow” photoresist stripper that will strip the front and backside of a wafer, typically in less than one minute. The unit is fully automated, cassette-to-cassette, and is a single-wafer process design.
Single-wafer process
3”, 4”, 5” and 6” wafer capability
Automatic Equip robot wafer loader / unloader
Infrared heat source for process temperature control
Downstream processing: No wafer radiation damage(<0.1 volt CV shift)
Automatic photo emission type end-point detection
Front and backside resist removal
GaSonic Aura 1000 Applications Photoresist Stripping
- High dose implant (As+, B+, P+)
- Post-polysilicon etch
- Post-metal etch
- Post-oxide etch
- Rework
Controlled Resist Removal
- Post-develop descum (pre-etch)
- Dry/wet process capability
- Resist planarization
- Uniformity capability (5% 1s)
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Allwin21 Corp. can also provide advanced Equip Robot transfer wafer technology , AW Control Software and Superior Temperature Control Technology to upgrade the refurbished Gasonics Aura 1000 which provides the following significant advantages


Wafer handling problems with Indexer System? Allwin21 has replaced the GaSonics Aura 1000 wafer handling system with the superior 3-axis Equipe ATM Wafer Handling Robot. This gives the A‑1000 a much superior wafer transport system with proven reliability, higher throughput, increased MTBF and lower overall cost. Along with fewer headaches, better peace-of-mind, and longer coffee breaks.
In semiconductor manufacturing plasma asher/stripper is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ashing which is removed with a vacuum pump.
Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas (O2) to ionizing radiation. At the same time, many free radicals are formed which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.
Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. Effectively, this means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active specie is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.
Allwin21 Corp can provide the following refurbished plasma asher/descum equipment.
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